| 1. | An analytical model for polysilicon quantization in mos devices
退化建模与仿真方法 |
| 2. | V groove mos device
槽型栅金属氧化物半导体掐 |
| 3. | Simulating threshold voltage shift of mos devices due to radiation in the low - dose range
低剂量辐照条件下的mosfet因辐照导致的阈值电压漂移的模拟 |
| 4. | This article is mainly about the sige hetrojunction mos device fabricated by soi technology
本论文主要介绍的是基于soi技术的sige异质结mos器件。 |
| 5. | The radiation effects of mos devices implanted bf2 at low dose rate are investigated in some different respects in this paper
本文从不同方面对bf _ 2 ~ -注入mos管低剂量率辐照效应进行了深入的研究。 |
| 6. | In the process of the circuit design , sige hbt and mos devices must be arranged properly in order to realize advantage complementarity
在具体电路设计过程中,根据sigehbt和mos器件的特点,合理使用两种器件以实现优势互补。 |
| 7. | Spic ( smart power integrated circuit ) based on new power mos device develop rapidly along with the advancement of micro - electronics technology
随着微电子技术的进步,以新型功率mos器件为基础的智能功率集成电路( spic )得到了迅速发展。 |
| 8. | It is one of trial projects of defensively science laboratory . high voltage soi lateral mos devices studied in this paper are early application work for soi spic
本课题进行高压soi横向mos器件的研究，是soispic研究的先期应用性工作，将为今后进行soispic的研究提供基础。 |
| 9. | It is the only one compound semiconductor whose native oxide is sio2 . therefore , the sic devices can be manufactured using the technology of the silicon processing , for example mos devices
Sic是唯一可以氧化生长成sio _ 2的化合物半导体材料，这使得它可以运用si平面工艺条件进行sic器件的制造，特别制作mos器件方面。 |
| 10. | Using sige bicmos darlington configuration as the input stage , the input resistance is increased by the mos devices while the transconductance of sige hbts is maintained . in the same time , the equivalent input noise is controlled well because of the sige hbts ’ good noise performance in the input stage
输入级的设计采用sigebicmos达林顿结构,在保留sigehbt高跨导优势的基础上充分利用mos器件来提升运放输入电阻,此外,基于输入级中sigehbt良好的噪声特性,运放的输入参考噪声电压可以大大降低。 |
